Photoelectrode/electrolyte interfacial band lineup engineering with alloyed III–V thin films grown on Si substrates
Source abstract
Abstract
In this work, we demonstrate how the classical concept of band gap engineering usually used in III–V semiconductor devices can be extended to the engineering of the band lineup between semiconducting photoelectrodes and electrolytes.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Nanowire Synthesis and Applications
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Affiliations
Univ Rennes, INSA Rennes, CNRS, Institut FOTON – UMR 6082, F-35000 Rennes, France
Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)–UMR6226, F-35000 Rennes, France
Tianjin Key Laboratory of Film, Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Funding
Agence Nationale de la Recherche
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