Theoretical simulation and experimental verification of the competition between different recombination channels in GaN semiconductors
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design
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Affiliations
School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, People's Republic of China
Department of Physics & Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou, 510640, People's Republic of China
School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng, 224051, P. R. China
Coll Optoelect Sci & Engn, National University of Defense Technology, Changsha, 410073, People's Republic of China
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China
Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, California, 94720, USA
Funding
National Natural Science Foundation of China · Natural Science Foundation of Inner Mongolia · National Key Research and Development Program of China · Foundation of Suzhou Institute of Nano-Tech and Nano-Bionics · U.S. Department of Energy