Digital laser transfer and stacking of hBN monolayer and graphene/hBN heterostructure
Source abstract
Abstract
Abstract One of the key challenges in technological applications based on two-dimensional (2D) materials is to reliably and precisely transfer them onto target substrates with a digital, high resolution and high throughput method. In this regard, here we demonstrate the unique advantages that laser-induced transfer can offer as a solution for the simultaneous printing and patterning of individual hBN (hexagonal boron nitride) monolayers, as well as of graphene/hBN bilayers. By employing a single, precisely shaped laser pulse, we exert fine control over the shape, size, and stacking of the transferred pixels, enabling the fabrication of heterostructures. Raman spectroscopy and scanning electron microscopy confirm the high structural quality and uniformity of the transferred materials, with minimal defects. Furthermore, ab initio molecular dynamics simulations corroborate the experimental findings, demonstrating the feasibility of transferring graphene/hBN heterostructures from the donor to the receiver substrate. Overall, this approach offers a single-step strategy for integrating 2D materials into electronic and optoelectronic devices, significantly reducing the complexity of the fabrication process.
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Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (62)
Show source-provided references
1. The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials10.1038/s41928-020-00529-x ↗
2. High‐performance monolayer SiMe‐graphene n‐type field‐effect transistors with low supply voltage and high on‐state current in sub‐5 nm gate length10.1002/aelm.202101359 ↗
3. Analyzing the carrier mobility in transition‐metal dichalcogenide MoS2 field‐effect transistors10.1002/adfm.201604093 ↗
4. Paraffin-enabled graphene transfer10.1038/s41467-019-08813-x ↗
5. Ultra-clean high-mobility graphene on technologically relevant substrates10.1039/D1NR05904A ↗
6. High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide10.1038/s41928-021-00657-y ↗
7. Extended quantum anomalous Hall states in graphene/hBN moiré superlattices10.1038/s41586-024-08470-1 ↗
8. Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy10.1088/2053-1583/acdefc ↗
9. Synthesis of patched or stacked graphene and hBN flakes: a route to hybrid structure discovery10.1021/nl303760m ↗
10. Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures10.1038/s41467-021-27524-w ↗
11. Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators10.1038/s41699-024-00461-0 ↗
12. Effects of electrode layer band structure on the performance of multilayer graphene–hBN–graphene interlayer tunnel field effect transistors10.1021/acs.nanolett.6b01646 ↗
13. Unconventional superconductivity in magic-angle graphene superlattices10.1038/nature26160 ↗
14. Electronic synapses made of layered two-dimensional materials10.1038/s41928-018-0118-9 ↗
15. Graphene-hexagonal boron nitride van der Waals heterostructures: an examination of the effects of different van der Waals corrections10.1088/2053-1591/ac187d ↗
16. Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films10.1021/acs.nanolett.5b00440 ↗
17. A review on transfer methods of two-dimensional materials10.1088/2053-1583/ad2f43 ↗
18. An eco‐friendly, CMOS‐compatible transfer process for large‐scale CVD‐graphene10.1002/admi.201900084 ↗
19. Selective soluble polymer–assisted electrochemical delamination of chemical vapor deposition graphene10.1007/s10008-018-04172-7 ↗
20. Autonomous robotic searching and assembly of two-dimensional crystals to build van der Waals superlattices10.1038/s41467-018-03723-w ↗
21. Nanodot array deposition via single shot laser interference pattern using laser-induced forward transfer10.1088/2631-7990/ab88bf ↗
22. Laser-induced forward transfer of high viscous, non-Newtonian silver nanoparticle inks: jet dynamics and temporal evolution of the printed droplet study10.1002/adem.201900605 ↗
23. Three-dimensional printing of interconnects by laser direct-write of silver nanopastes10.1002/adma.201001729 ↗
24. A direct transfer solution for digital laser printing of CVD graphene10.1088/2053-1583/ac1ab6 ↗
25. Digital laser-induced printing of MoS210.1515/nanoph-2022-0736 ↗
26. Laser induced transfer of 2D materials for optoelectronic applications
27. Laser-induced backward transfer of monolayer graphene10.1016/j.apsusc.2020.147488 ↗
28. Indium tin oxide-free inverted organic photovoltaics using laser-induced forward transfer silver nanoparticle embedded metal grids10.1021/acsaelm.2c00217 ↗
29. Laser induced forward transfer of graphene10.1063/1.5001712 ↗
30. Electrochemistry at the edge of a van der Waals heterostructure10.1002/smll.202306361 ↗
31. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
32. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
33. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
34. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu10.1063/1.3382344 ↗
35. Femtosecond, picosecond and nanosecond laser ablation of solids10.1007/BF01567637 ↗
36. Fundamentals of laser-material interaction and application to multiscale surface modification
37. Single-crystal hBN monolayers from aligned hexagonal islands10.1038/s41467-024-52944-9 ↗
38. Identifying luminescent boron vacancies in h-BN generated using controlled He+ ion irradiation10.1021/acs.nanolett.3c03113 ↗
39. Spatially resolved Raman spectroscopy of defects, strains, and strain fluctuations in domain structures of monolayer graphene10.1038/s41598-017-16969-z ↗
40. Raman signature and phonon dispersion of atomically thin boron nitride10.1039/C6NR09312D ↗
41. Vibrational properties in highly strained hexagonal boron nitride bubbles10.1021/acs.nanolett.1c04197 ↗
42. Raman scattering measurement of suspended graphene under extreme strain induced by nanoindentation10.1002/adma.202200946 ↗
43. A case study: effect of defects in CVD-grown graphene on graphene enhanced Raman spectroscopy10.1039/C5RA11100E ↗
44. Raman spectrum of graphene and graphene layers10.1103/PhysRevLett.97.187401 ↗
45. Raman spectroscopy as a versatile tool for studying the properties of graphene10.1038/nnano.2013.46 ↗
46. Quantifying defects in graphene via Raman spectroscopy at different excitation energies10.1021/nl201432g ↗
47. Identifying suitable substrates for high-quality graphene-based heterostructures10.1088/2053-1583/aa5b0f ↗
48. Raman spectroscopy of graphene and graphite: disorder, electron–phonon coupling, doping and nonadiabatic effects10.1016/j.ssc.2007.03.052 ↗
49. Electron-phonon coupling and Raman spectroscopy in graphene10.1103/PhysRevB.75.045404 ↗
50. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor10.1038/nnano.2008.67 ↗
51. Electric field effect tuning of electron-phonon coupling in graphene10.1103/PhysRevLett.98.166802 ↗
52. Phonon renormalization in doped bilayer graphene10.1103/PhysRevB.79.155417 ↗
53. Graphene bilayers with a twist10.1038/s41563-020-00840-0 ↗
54. Raman spectroscopy as probe of nanometre-scale strain variations in graphene10.1038/ncomms9429 ↗
55. Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale10.1021/nl901073g ↗
56. Disorder in van der Waals heterostructures of 2D materials10.1038/s41563-019-0366-8 ↗
57. Charge scattering and mobility in atomically thin semiconductors10.1103/PhysRevX.4.011043 ↗
58. Tailoring electrical transport across grain boundaries in polycrystalline graphene10.1126/science.1218948 ↗
59. Origin of spatial charge inhomogeneity in graphene10.1038/nphys1365 ↗
60. Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent10.1016/j.jcrysgro.2006.12.061 ↗
61. Correlated states in doubly-aligned hBN/graphene/hBN heterostructures10.1038/s41467-021-27514-y ↗
62. 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators10.1038/s41467-021-20926-w ↗