Room temperature electron–hole liquid phase in monolayer MoSi2Z4 (Z = pinctogen)
Source abstract
Abstract
Abstract Photo-excited electrons and holes in insulators, above a critical density and below a critical temperature, can condense to form an electron–hole liquid (EHL) phase. However, observing the EHL phase at room temperature is extremely challenging. Here, we introduce the monolayer {MoSi}2{Z}4 (Z = N, As, P) series of compounds as a promising platform for observing the EHL phase at room temperature. The higher impact of the Coulomb interactions in two dimensions helps these monolayers support the EHL phase with an increased EHL binding energy and transition temperature, along with strongly bound excitons. Our findings motivate further exploration of the {MoSi}2{Z}4 monolayers for realizing the EHL phase at high temperatures to harness collective phenomena for optoelectronic applications.
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Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (70)
Show source-provided references
1. Keldysh · 1968
2. Electron-hole condensation in semiconductors10.1126/science.189.4207.955 ↗
3. Observation of Bose–Einstein condensates of excitons in a bulk semiconductor10.1038/s41467-022-33103-4 ↗
4. Excitons and electron–hole liquid state in 2d γ-phase group-IV monochalcogenides10.1002/adfm.202000533 ↗
5. Asnin · JETP Lett. · 1969 · 9 · 415
6. Dense electron–hole plasma formation and ultralong charge lifetime in monolayer MoS2 via material tuning10.1021/acs.nanolett.8b04408 ↗
7. Room-temperature electron–hole liquid in monolayer MoS210.1021/acsnano.9b04124 ↗
8. Electron–hole liquid in a van der Waals heterostructure photocell at room temperature10.1038/s41566-019-0349-y ↗
9. Electron-hole fluid in polar semiconductors
10. Quantum droplets of electrons and holes10.1038/nature12994 ↗
11. Evidence for a monolayer excitonic insulator10.1038/s41567-021-01422-w ↗
12. Photograph of an electron-hole drop in germanium10.1103/PhysRevLett.34.1292 ↗
13. Electron-hole liquids in polar semiconductors10.1103/PhysRevLett.37.874 ↗
14. Seitz · 1978 · vol 32
15. Excitonic processes in solids10.1080/09500348714550031 ↗
16. Metallic state of the electron-hole liquid, particularly in germanium10.1103/PhysRevLett.28.961 ↗
17. Electron-hole liquids in semiconductors10.1103/PhysRevB.7.1508 ↗
18. Theory of electron-hole liquid in semiconductors10.1103/PhysRevB.18.768 ↗
19. Landau · 1993
20. Rice · 1978 · vol 32 · 110.1016/S0081-1947(08)60438-5 ↗
21. Observation of electron-hole liquid in gap10.1103/PhysRevLett.38.1164 ↗
22. Excitonic phase diagram in unstressed Ge10.1103/PhysRevB.46.10098 ↗
23. Thermodynamics of the electron-hole liquid in Ge, Si and GaAs10.1103/PhysRevLett.33.911 ↗
24. Quasi-two-dimensional electron–hole droplets10.1038/s41566-019-0400-z ↗
25. Theoretical phase diagram for the room-temperature electron–hole liquid in photoexcited quasi-two-dimensional monolayer MoS210.1021/acs.nanolett.7b04377 ↗
26. Coupled spin and valley physics in monolayers of MoS2 and other group-vi dichalcogenides10.1103/PhysRevLett.108.196802 ↗
27. Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer and bulk MoS 210.1103/PhysRevB.88.045412 ↗
28. Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe210.1016/j.ssc.2014.11.005 ↗
29. Observation of dynamic screening in the excited exciton states in multilayered MoS210.1103/PhysRevB.103.075437 ↗
30. Electron-hole liquid in monolayer transition metal dichalcogenide heterostructures10.1134/S0021364020020101 ↗
31. Phase diagram of electron–hole liquid in monolayer heterostructures based on transition metal dichalcogenides10.1134/S1063776121100095 ↗
32. Emergence and relaxation of an e–h quantum liquid phase in photoexcited MoS2 nanoparticles at room temperature10.1002/adom.202202567 ↗
33. Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS210.1103/PhysRevB.104.L201404 ↗
34. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials10.1126/science.abb7023 ↗
35. Fluence dependent dynamics of excitons in monolayer MoSi2Z4 (Z = pnictogen)10.1088/1361-648x/acc43f ↗
36. A comprehensive study of complex non-adiabatic exciton dynamics in MoSi2N410.1016/j.mtphys.2022.100814 ↗
37. Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi2N410.1038/s41524-022-00815-6 ↗
38. Excitons and light-emission in semiconducting MoSi2X4 two-dimensional materials10.1038/s41699-022-00355-z ↗
39. Valley-dependent properties of monolayer MoSi2N4,WSi2N4 MoSi2As410.1103/PhysRevB.102.235435 ↗
40. Tunable spin polarization and electronic structure of bottom-up synthesized MoSi2N4 materials10.1103/PhysRevB.104.L201112 ↗
41. Emerging versatile two-dimensional MoSi2N4 family10.1002/adfm.202214050 ↗
42. Accurate electronic properties and non-linear optical response of two-dimensional MA2Z410.1039/D0NR09146D ↗
43. Optoelectronic properties of mixed iodide–bromide perovskites from first-principles computational modeling and experiment10.1021/acs.jpclett.2c00938 ↗
44. Designing power-efficient transistors using narrow-bandwidth materials from the MA2Z4 M=Mo, Cr, Zr, Ti, Hf a=Si, Ge z=N, P, As ) monolayer series10.1103/PhysRevApplied.19.064058 ↗
45. LIII. Ionization in the solar chromosphere10.1080/14786441008636148 ↗
46. Valley pseudospin in monolayer MoSi2N4 MoSi2As410.1103/PhysRevB.103.035308 ↗
47. Novel two-dimensional layered MoSi2Z4 (Z = P, As): new promising optoelectronic materials10.3390/nano11030559 ↗
48. Dynamical shift and broadening of core excitons in semiconductors10.1103/PhysRevLett.49.1519 ↗
49. Effects of dynamical screening on resonances at inner-shell thresholds in semiconductors10.1103/PhysRevB.29.5718 ↗
50. Electronic excitations: density-functional versus many-body green’s-function approaches10.1103/RevModPhys.74.601 ↗
51. Yambo: an ab initio tool for excited state calculations10.1016/j.cpc.2009.02.003 ↗
52. Many-body perturbation theory calculations using the yambo code10.1088/1361-648x/ab15d0 ↗
53. Giuliani · 2005
54. Electron-hole liquid in heavily doped n-type Ge and Si10.1088/0022-3719/8/9/009 ↗
55. The electron-hole liquid in semiconductors10.1080/00107518608211022 ↗
56. Dielectric screening in two-dimensional insulators: implications for excitonic and impurity states in graphane10.1103/PhysRevB.84.085406 ↗
57. Exciton band structure of monolayer MoS210.1103/PhysRevB.91.075310 ↗
58. Condensation of excitons in germanium and silicon10.1088/0022-3719/5/17/014 ↗
59. Formation of a high Tc electron-hole liquid in diamond10.1103/PhysRevLett.88.057404 ↗
60. Temperature-dependent luminescence from the electron-hole liquid in Ge10.1103/PhysRevLett.31.386 ↗
61. Liquid-gas phase diagram of an electron-hole fluid10.1103/PhysRevLett.33.219 ↗
62. Band-gap renormalization in semiconductors with multiple inequivalent valleys10.1103/PhysRevB.45.1139 ↗
63. The electron-hole liquid in a semiconductor10.1070/PU1985v028n01ABEH003630 ↗
64. The electron-hole liquid in semiconductors: experimental aspects10.1016/s0081-1947(08)60439-7 ↗
65. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
66. Special points for Brillouin-zone integrations10.1103/PhysRevB.13.5188 ↗
67. Advanced capabilities for materials modelling with quantum ESPRESSO10.1088/1361-648x/aa8f79 ↗
68. New method for calculating the one-particle green’s function with application to the electron-gas problem10.1103/PhysRev.139.A796 ↗
69. Electron correlation in semiconductors and insulators: band gaps and quasiparticle energies10.1103/PhysRevB.34.5390 ↗
70. Electron-hole excitations and optical spectra from first principles10.1103/PhysRevB.62.4927 ↗