Scalable production of p-MoTe ₂ /n-MoS ₂ heterostructure array and its application for self-powered photodetectors and CMOS inverters

Abstract Recent advances in van der Waals heterostructures have extensively promoted the development of new-generation electronic devices. However, the normally utilized mechanical exfoliation method for preparing two-dimensional semiconductors is not scalable for circuit-level application. Herein, the fabrication and characterization of wafer-scale heterostructure arrays composed of multilayer 2H-MoTe ₂ and single-layer 2H-MoS ₂ are demonstrated. Owing to the type-II band alignment facilitating efficient electron–hole separation, the devices fabricated by the p-MoTe ₂ /n-MoS ₂ heterostructure exhibit an excellent gate-tunable PN diode behavior, with a rectification ratio of over 10 ³ and a self-powered photocurrent with a remarkable on–off ratio of ∼10 ³ at a zero bias voltage. Complementary inverter arrays based on p-MoTe ₂ /n-MoS ₂ are also demonstrated. The scalable production of p–n junction devices and complementary inverters paves the way for future integrated platforms in photoelectric detection and logic computation.