Intrinsic transport properties of nanoporous graphene highly suitable for complementary field-effect transistors
Source abstract
Abstract
Abstract The recent success to synthesize an ordered array of pores in graphene by a bottom-up approach (Moreno et al 2018 Science 360 199) yields a semiconducting nanoporous graphene with a bandgap of 0.6 eV. In this paper, we present calculations of the intrinsic carrier mobility in this new type of two-dimensional material. Using a fully atomistic approach, we show that carriers are mostly scattered by acoustic phonons, approximately like in semiconducting carbon nanotubes. The carrier mobility shows strong anisotropy and is as high as 800 cm 2 (Vs) −1 at low carrier density. Such a high mobility, together with symmetric properties of electrons and holes, suggests that porous graphene is a promising candidate for next generations of complementary field-effect transistor technology.
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Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (56)
Show source-provided references
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
2. High-gain inverters based on wse2 complementary field-effect transistors10.1021/nn5009929 ↗
3. High gain, low noise, fully complementary logic inverter based on bi-layer wse2 field effect transistors10.1063/1.4894426 ↗
4. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors10.1186/s11671-015-0827-1 ↗
5. Two-dimensional semiconductors for transistors10.1038/natrevmats.2016.52 ↗
6. Perspective: 2d for beyond cmos10.1063/1.5022769 ↗
7. The electronic properties of graphene10.1103/RevModPhys.81.109 ↗
8. Edge state in graphene ribbons: nanometer size effect and edge shape dependence10.1103/PhysRevB.54.17954 ↗
9. Energy gaps in graphene nanoribbons10.1103/PhysRevLett.97.216803 ↗
10. Graphene nanoribbons with smooth edges behave as quantum wires10.1038/nnano.2011.138 ↗
11. Exceptional ballistic transport in epitaxial graphene nanoribbons10.1038/nature12952 ↗
12. Room-temperature magnetic order on zigzag edges of narrow graphene nanoribbons10.1038/nature13831 ↗
13. Single-layer semiconducting nanosheets: high-yield preparation and device fabrication10.1002/anie.201106004 ↗
14. Single-layer mos2 transistors10.1038/nnano.2010.279 ↗
15. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals10.1038/ncomms2018 ↗
16. High-performance single layered WSe2 p-fets with chemically doped contacts10.1021/nl301702r ↗
17. Two-dimensional semiconductors with possible high room temperature mobility10.1007/s12274-014-0532-x ↗
18. High-performance monolayer WS2 field-effect transistors on high-k dielectrics10.1002/adma.201502222 ↗
19. 2d transition metal dichalcogenides10.1038/natrevmats.2017.33 ↗
20. High mobility 2d palladium diselenide field-effect transistors with tunable ambipolar characteristics10.1002/adma.201602969 ↗
21. Analyzing the carrier mobility in transition-metal dichalcogenide MoS2 field-effect transistors10.1002/adfm.201604093 ↗
22. A comprehensive study on carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers10.1039/C8TA01943F ↗
23. Phosphorene: an unexplored 2d semiconductor with a high hole mobility10.1021/nn501226z ↗
24. Electric field effect in ultrathin black phosphorus10.1063/1.4868132 ↗
25. Black phosphorus field-effect transistors10.1038/nnano.2014.35 ↗
26. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors10.1021/nl5008085 ↗
27. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics10.1038/ncomms5458 ↗
28. Tunable transport gap in phosphorene10.1021/nl5025535 ↗
29. Electron transport in strained-silicon directly on insulator ultrathin-body n-mosfets with body thickness ranging from 2 to 25 nm10.1109/LED.2007.891795 ↗
30. Phonon-limited mobility in n-type single-layer MoS2 from first principles10.1103/PhysRevB.85.115317 ↗
31. Acoustic phonon limited mobility in two-dimensional semiconductors: deformation potential and piezoelectric scattering in monolayer MoS2 from first principles10.1103/PhysRevB.87.235312 ↗
32. Intrinsic electrical transport properties of monolayer silicene and MoS2 from first principles10.1103/PhysRevB.87.115418 ↗
33. A first principles method to simulate electron mobilities in 2d materials10.1088/1367-2630/16/10/105009 ↗
34. First-principles method for electron–phonon coupling and electron mobility: applications to two-dimensional materials10.1103/PhysRevB.93.035414 ↗
35. Theoretical impurity-limited carrier mobility of monolayer black phosphorus10.1063/1.4940381 ↗
36. An atlas of two-dimensional materials10.1039/C4CS00102H ↗
37. Graphene nanomesh10.1038/nnano.2010.8 ↗
38. Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography10.1021/nl100750v ↗
39. Bottom–up synthesis of multifunctional nanoporous graphene10.1126/science.aar2009 ↗
40. On-surface synthesis of superlattice arrays of ultra-long graphene nanoribbons10.1039/C8CC04830D ↗
41. Critical role of phenyl substitution and catalytic substrate in the surface-assisted polymerization of dibromobianthracene derivatives10.1021/acs.chemmater.8b03094 ↗
42. Chemically derived, ultrasmooth graphene nanoribbon semiconductors10.1126/science.1150878 ↗
43. One-dimensional electrical contact to a two-dimensional material10.1126/science.1244358 ↗
44. Carbon nanotube electronics: recent advances10.1016/j.mattod.2014.07.008 ↗
45. Almost perfectly symmetric swcnt-based cmos devices and scaling10.1021/nn901079p ↗
46. Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays10.1021/nl049222b ↗
47. Doping-free fabrication of carbon nanotube based ballistic cmos devices and circuits10.1021/nl0717107 ↗
48. Magnetic-phase dependence of the spin carrier mean free path in graphene nanoribbons10.1103/PhysRevLett.116.236602 ↗
49. Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene10.1103/PhysRevB.92.075414 ↗
50. Atomistic modeling of electron–phonon coupling and transport properties in n-type [1 1 0] silicon nanowires10.1103/PhysRevB.82.115319 ↗
51. Electron–phonon interactions and the intrinsic electrical resistivity of graphene10.1021/nl402696q ↗
52. Phonon-limited resistivity of graphene by first-principles calculations: electron–phonon interactions, strain-induced gauge field, and boltzmann equation10.1103/PhysRevB.90.125414 ↗
53. Controlling electron–phonon interactions in graphene at ultrahigh carrier densities10.1103/PhysRevLett.105.256805 ↗
54. Deposition of high-quality hfo2 on graphene and the effect of remote oxide phonon scattering10.1103/PhysRevLett.105.126601 ↗
55. Electron transport in nanoporous graphene: probing the talbot effect10.1021/acs.nanolett.8b04616 ↗
56. Theoretical investigation of the phonon-limited carrier mobility in (0 0 1) si films10.1063/1.4966616 ↗