Nondestructive hole doping enabled photocurrent enhancement of layered tungsten diselenide
Source abstract
Abstract
Abstract Atomically thin tungsten diselenide (WSe 2 ) has emerged as a promising material for the next generation electronic and optoelectronic devices. Here, we report an enhancement of WSe 2 photodetector performance via surface functionalization with molybdenum trioxide (MoO 3 ). Strong hole doping from MoO 3 to WSe 2 was revealed by in situ field-effect transistor device evaluation, x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements. Moreover, the responsivity and external quantum efficiency of WSe 2 photodetector increased around eight folders after the surface functionalization with MoO 3 . We attribute the enhanced performance to the narrowed Schottky barrier and the modulation of the trap states by surface functionalization.
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Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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