The effects of changing the electrodes temperature on the tunnel magnetoresistance in the ferromagnetic single electron transistor
Source abstract
Abstract
Abstract Ferromagnetic single electron transistor with electrodes having different temperatures is investigated and the effects of changing electrodes temperature on TMR of system are studied. A modified orthodox theory is used to study the system and to calculate the electron tunneling transition rate. The results show that the temperature of electrodes can be an effective tool to control and tune the tunnel magnetoresistance of FM-SET. Also, the effects of parameters such as resistance ratio of junctions, magnetic polarization and spin relaxation time on the behaviour of the system are studied.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum and electron transport phenomena · Mechanical and Optical Resonators · Molecular Junctions and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Single-electron device simulation10.1109/16.870553 ↗
2. Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctions10.1007/BF00683469 ↗
3. Single-electron transistors: Electrostatic analogs of the dc squids10.1109/TMAG.1987.1065001 ↗
4. Correlated discrete transfer of single electrons in ultrasmall tunnel junctions10.1147/rd.321.0144 ↗
5. Thermometry by arrays of tunnel junctions10.1103/PhysRevLett.73.2903 ↗
6. Single-electron pump based on charging effects10.1209/0295-5075/17/3/011 ↗
7. The radio-frequency single-electron transistor (rf-set): a fast and ultrasensitive electrometer10.1126/science.280.5367.1238 ↗
8. Amplifying quantum signals with the single-electron transistor10.1038/35023253 ↗
9. Nanometre-scale displacement sensing using a single electron transistor10.1038/nature01773 ↗
10. Approaching the quantum limit of a nanomechanical resonator10.1126/science.1094419 ↗
11. Effects of overheating in a single-electron transistor10.1063/1.357424 ↗
12. Enhanced magnetic valve effect and magneto-coulomb oscillations in ferromagnetic single electron transistor10.1143/JPSJ.66.1261 ↗
13. Ferromagnetic single electron transistor10.1016/S0038-1101(98)00039-2 ↗
14. Non-equilibrium spin accumulation in ferromagnetic single-electron transistors10.1007/s100510050784 ↗
15. Nonequilibrium spin distribution in a single-electron transistor10.1103/PhysRevB.59.89 ↗
16. Asymmetric tunable tunneling magnetoresistance in single-electron transistors10.1016/S0304-8853(00)00427-3 ↗
17. Fabrication and characteristics of ferromagnetic single electron transistors10.1016/j.jmmm.2003.12.1194 ↗
18. Transport characteristics of ferromagnetic single-electron transistors10.1002/pssb.200301647 ↗
19. Non-equilibrium effects and self-heating in single-electron coulomb blockade devices10.1016/S0370-1573(96)00065-8 ↗
20. Fully overheated single-electron transistor10.1103/PhysRevLett.104.196805 ↗
21. Giant current fluctuations in an overheated single-electron transistor10.1103/PhysRevB.82.205316 ↗
22. Analytic solution for the current-voltage characteristic of two mesoscopic tunnel junctions coupled in series10.1103/PhysRevB.43.1146 ↗
23. Interplay of spin accumulation and coulomb blockade in double ferromagnetic junctions10.1016/S0304-8853(98)00606-4 ↗