Effect of low-temperature annealing on transport properties of Ga1−xMnxAs

Abstract We have studied transport properties of the III–V-based diluted magnetic semiconductor Ga 1−x Mn x As (x=0.05) in order to determine the dependence of T C and the conductivity σ on the hole concentration p . The hole density is altered through post-growth annealing and determined by Hall measurements. By separating the measured Hall signal into an anomalous and normal contribution taking the magnetoresistance into account, values for p are obtained even for samples with a relatively low Curie temperature T C .