Extraordinary Hall effect in Co implanted GaAs hybrid magnetic semiconductors
Source abstract
Abstract
Abstract Hybrid Co/GaAs ferromagnetic semiconductors have been prepared by implantation method. In these samples, sheet resistance shows weak temperature dependence, and the extraordinary Hall effect with positive coefficient is observed. In small Co content samples, Hall resistance increases with decreasing temperature and maximum value of 3.6×10−2 Ω is obtained at 150 K.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Magnetic Field Sensors Techniques
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References (5)
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