Magneto-current study in a silicon base spin valve transistor

Abstract The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor ( R B ) was applied to the measurement circuit to replace the base bias ( V B ). The MC ratios of the collector current ( I C ) can be kept near its maximum value when the emitter bias ( V E ) changes several volts for the suitable R B s in the experiment, and the results are very close to those of the calculations of computer.