Volt–ampere characteristics of spin half-metallic transistor

Abstract A new construction of the spin transistor is proposed and its volt–ampere characteristics (VAC) are theoretically investigated. It is based on the ferromagnetic half-metals and is referred to as a spin half-metallic transistor (SHMT). SHMT is revealed to amplify electric current as a bipolar transistor. At the same time, its properties drastically depend on the reciprocal orientation of magnetizations of its three junctions; so SHMT can be used as a switching device. Also properties of an “F ↑ –F ↓ junction” are considered. This device consists of two half-metallic electrodes with antiparallel magnetizations. Its VAC reminds VAC of a diode in some voltage range. Behavior of the F ↑ –F ↓ junction under different conditions is considered.