Si-based magnetic tunnel transistor with high transfer ratio

Abstract The properties of Si-based magnetic tunnel transistor (MTT) with high transfer ratio are presented. MTTs were prepared on Si(1 0 0) substrates by magnetron sputter deposition. Magnetocurrent ratios of 53–55% and high transfer ratios of (1–2)×10−4 for emitter-base bias 1.5–2 V were obtained at 77 K. High collector current value of about 0.9 μA for 2 V was also obtained.