Residual resistivity of (Ga,Mn)As alloys from ab initio calculations

Abstract The residual resistivity of diluted (Ga,Mn)As magnetic semiconductors with native compensating defects (As-antisites, Mn-interstitials) is calculated from first principles using the Kubo–Greenwood linear response theory. The concentration variations of the resistivity reflect the strength of impurity scattering and the number of carriers. In agreement with a recent experiment, the calculated resistivities are strongly correlated with the alloy Curie temperatures evaluated in terms of a classical Heisenberg Hamiltonian.