Pressure-induced phase transition in α-MnS

Abstract The IR reflection measurements of α-MnS have been performed at room temperature under various pressures. It is observed that the reflectivity increases drastically at the pressure range of 23–29 GPa and becomes almost constant at the higher pressure. The carrier concentrations obtained from the reflectivity spectra at the pressures higher than 29 GPa are the order of 10 22 cm −3 . Therefore it is concluded that pressure-induced semiconductor–metal transition occurs at the pressure range of 23–29 GPa. This result is quite consistent with the newest results of X-ray analysis.