Electric field control of the ferromagnetic resonance linewidth in synthetic antiferromagnetic heterostructure

In this study, we present a novel approach to control the microwave properties of a Co/Ru/FeNi film, characterized by strong antiferromagnetic coupling and in plane uniaxial anisotropy. The film is fabricated on a Pb(Mg _1/3Nb _2/3)O ₃-PbTiO ₃ (PMN-PT) ferroelectric substrate using the magnetron oblique sputtering. Our experimental results demonstrate a remarkable non-volatile mediation of the ferromagnetic resonance (FMR) field and linewidth by applying the perpendicular-bias electric field. The observed asymmetric butterfly curve indicates the existence of electric mediation dominated by strain effect. Moreover, we investigate the angular dependence of FMR under different electric field, which reveals changes in magnetic anisotropy including FMR field. Notably, the FMR linewidth exhibits a distinctive four-fold anisotropy. Through microstructure analysis of the film surface, we identify that the origin of this FMR linewidth anisotropy is attributed to the two-magnon scattering induced by the oblique sputtering.