p-type co-doping effect of (Ga,Mn)P: Magnetic and magneto-transport properties
Source abstract
Abstract
Abstract In this paper, we perform a comparison of magnetic and electrical properties between Mn-doped and (Mn, Zn) co-doped GaP dilute ferromagnetic semiconductors. Due to the shallow Zn impurity level (∼20–40 meV above the top of the III-V compounds valence band), the Zn co-doping leads to the increase of conductivity of (Ga,Mn)P, however both the Curie temperature and magnetization reduce, which is probably due to the suppression of active Mn substitution by Zn co-doping.
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Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · GaN-based semiconductor devices and materials
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