Fabrication of p-type ferrimagnetic semiconductor thin films based on FeTiO3–Fe2O3 solid solution

Abstract Epitaxial thin films composed of 0.8FeTiO 3 ·0.2Fe 2 O 3 in molar ratio solid solution have been prepared on α-Al 2 O 3 (0 0 0 1) substrates by a pulsed laser deposition (PLD) method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase ( R 3 ¯ symmetry) can be obtained under limited deposition condition: oxygen partial pressure ( P O 2 ) of 1.0×10 −3 Pa and substrate temperature ( T S ) of 700 °C. The thin film with the ordered phase is a p-type semiconductor and ferrimagnetic with the Curie temperature ( T C ) around 270 K.