High-resolution photoemission study of the hybridization gap in the Kondo semiconductor CeRhAs

K. Shimada; M. Higashiguchi; M. Arita; H. Namatame; M. Taniguchi; S.-i. Fujimori; Y. Saitoh; A. Fujimori; Y. Takata; S. Shin; K. Kobayashi; E. Ikenaga; M. Yabashi; K. Tamasaku; Y. Nishino; D. Miwa; T. Ishikawa; T. Sasakawa; T. Takabatake

doi:10.1016/j.jmmm.2006.10.201

journal article·2007-03

High-resolution photoemission study of the hybridization gap in the Kondo semiconductor CeRhAs

K. Shimada, M. Higashiguchi, M. Arita, H. Namatame, M. Taniguchi, S.-i. Fujimori, Y. Saitoh, A. Fujimori, Y. Takata, S. Shin, K. Kobayashi, E. Ikenaga, M. Yabashi, K. Tamasaku, Y. Nishino, D. Miwa, T. Ishikawa, T. Sasakawa, T. Takabatake

Journal of Magnetism and Magnetic Materials· Volume 310· Issue 2

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Abstract

Abstract We have examined the electronic states of the Kondo semiconductor CeRhAs and the semimetal CeRhSb by means of high-resolution photoemission spectroscopy using tunable photon energies from h ν = 40 up to 5948 eV. On the basis of the photon-energy dependence of the photoionization cross-section, we have elucidated the p–d–f hybridized states in these compounds.

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Research context

Electronic materials

OpenAlex topics: Rare-earth and actinide compounds · Inorganic Chemistry and Materials · Advanced Materials Characterization Techniques

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References (17)

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