Magneto-transport properties of MnGeP2 ferromagnetic semiconductor
Source abstract
Abstract
Abstract We have studied the magneto-transport properties of a chalcopyrite MnGeP 2 thin film grown on GaAs(1 0 0) by molecular beam epitaxy (MBE). The temperature dependent resistance results strongly support the presence of ferromagnetic phase transition around 320 K. On the other hand, it shows an anomalous Hall effect in p-type MnGeP 2 thin film, indicating the presence of spin-polarized hole carriers in MnGeP 2 , which may be useful for the spintronic devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Chalcogenide Semiconductor Thin Films · Heusler alloys: electronic and magnetic properties
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References (6)
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