Semiconducting antiferromagnetism in MgH 2 doped with 3 d transition metals: A first-principles view

Abstract The effects of 3 d transition metals V, Cr, Mn, Fe, Co, and Ni doping on the structural, electronic, and magnetic properties of MgH 2 were investigated based on density functional calculations. The results indicated that doping such an isolated foreign atom can produce considerable spin polarization and tailor MgH 2 into n -type magnetic semiconductor. In particular, the long-range antiferromagnetic coupling was achieved in the Mn, Fe, Co, and Ni doped cases. The stability of the antiferromagnetic phase is mainly due to the hole number and the larger superexchange interaction between the occupied and unoccupied e g ( t 2g ) states. This work pointed out the possibilities of achieving antiferromagnetic characteristic and semiconducting feature in MgH 2 upon transition-metal doping for potential application in spintronics and hydride electronics.