Linear universal variation versus electronegativity-inverse of the magnetic moments induced by dopants on their anion ligands in DMS

Abstract Recently it has been proposed that the magnetic coupling among magnetic dopants in diluted magnetic semiconductors (DMSs) and doped transition metal oxides (TMOs) has a considerable local contribution attributed to the magnetic moment, Δ μ tot , induced by the dopants on their first nearest neighboring (1nn) anions. In the present work, we identify the correlations which link Δ μ tot to the free atomic properties of the host and dopant atoms, in particular their atomic susceptibilities and in turn to those atomic properties which are associated with atomic susceptibility, namely the electronegativity, E N , and the ionization potentials, I n , of the constituent atoms. Interestingly, the ab initio numerical results for Δ μ tot obtained for ZnO, GaN, GaP and CdS doped with transition metals of the 3 d -series reveal a universal variation with respect to the inverse of the difference of the electronegativities of the dopants and their anion ligands.