Magnetic and optical properties of Mn-implanted Si material

Abstract Si 1− x Mn x diluted magnetic semiconductors with x ≈5% with a ferromagnetic structure were formed through Mn ion implantation and post-annealing. The temperature- and magnetic field-dependent magnetization were measured by magnetometry using a superconducting quantum interference device. The Si 0.95 Mn 0.05 materials were found to be homogeneous, and to exhibit p-type conductivity and ferromagnetic ordering with a Curie temperature ( T C ) above room temperature. The low-temperature ( T = 10 K ) photoluminescence spectra exhibited Mn-related free-to-donor pair transitions for the Si 1− x Mn x materials with x ≈5%. A Mn double-donor level in these samples was found to be Mn substituted for Si (Mn Si ) and located around 290 meV above the valence band, suggesting that the ferromagnetism observed in Mn-implanted Si material is hole-mediated ferromagnetism.