Room-temperature anisotropic magnetoresistive sensor based on manganese perovskite thick films

Abstract Manganese perovskites, having the ferromagnetic transition above room temperature, are good candidates for use as a magnetoresistive sensor. In the previous works, some potential applications using thick films (Appl. Phys. Lett. 69 (1996) 1486; Sensors Actuators 81 (2000) 64) were presented. In this paper, the role of the anisotropic magnetoresistance (MR) has been explored in La 2/3 Sr 1/3 MnO 3 thick films on polycrystalline Al 2 O 3 substrates showing that at low magnetic field and at RT, this contribution is comparable with the regular MR. A magnetoresistive contactless potentiometer has been developed in order to show the feasibility of using the anisotropic MR effect for a magnetic sensor.