Doping effect of indium oxide-based diluted magnetic semiconductor thin films

Abstract Transition metal (TM= Mn, Fe, and Co) doped In 2− x TM x O 3 (0.0⩽ x ⩽1.0) nanostructure thin films have been successfully prepared by means of sol–gel process onto SiO 2 / Si (1 0 0) , Corning 7059 glass and MgO (1 0 0) substrates annealed at 600°C in oxygen atmosphere. Room temperature magnetic hysteresis curve showed an ferromagnetic behavior and this result clearly indicates that the In 2− x TM x O 3 thin films are advantageous not only for practical application to magnetic device but also for physical basic studies on electro-magnetic properties of In 2− x TM x O 3 films.