Effect of ultrasonic irradiation time on the physical and optoelectronic properties of SnSe nanorods
Source abstract
Abstract
Abstract In this study, SnSe nanorods were prepared by the precipitation method and under irradiation of ultrasound waves at different times. The effect of ultrasound waves irradiation's time on the physical properties of these nanostructures was studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray (EDX) spectroscopy, photoluminescence (PL), Raman, and UV-Vis-NIR spectroscopies. The results of XRD, Raman, and EDX spectra indicated the orthorhombic phase of SnSe and the presence of Sn and Se elements in the samples, respectively. The crystallite size was evaluated by XRD peak broadening, and FESEM images revealed that under ultrasound waves irradiation, the diameter of nanorods declined with increasing time. Additionally, given PL spectra, applying ultrasound waves resulted in decreasing the intensity and broadening some bands into higher wavelengths. Absorption spectra of these samples were measured in the range of 200-1100 nm, and the results demonstrated that they were shifted into higher wavelengths, and energy bandgap changes were explored considering ultrasound waves irradiation's time. Electrical properties revealed that with increasing time, the carrier concentration declined, and the responsivity, sensitivity, and carrier mobility were increased.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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