PZT Ferroelectric Thin Film for Uncooled Pyroelectric Infrared Detectors

Lead zirconate titanate(PZT) ferroelectric thin films were prepared by both sol-gel and r.f. magnetron sputtering technologies. In order to decrease the crystallization temperature of thin films and improve the probabilities of nucleus, a PZT seed-layer was prepared by using the sol-gel method. The PZT ferroelectric thin films with about 500nm thickness were sputterdeposited from a Pb(ZrxTi1-x)O3(x=0.3) ceramic target containing 10% excess Pb on PZT(seed layer)/Pt/Ti/SiO2/Si substrates. The stepping-annealing with RTP (rapid thermal process) was proposed for thermal treatment of the PZT ferroelectric thin films. The PZT ferroelectric thin film showed good dielectric and pyroelectric properties by pre-annealing at 450℃for 5min and following post-annealing at 575℃for 5min. The results of pyroelectric coefficient 2.3×10-8C·2cm-2·K-1, relative dielectric constant 500, dielectric loss 0.02, detectivity figure of merit 0.94×10-5Pa-0.5 were obtained.