Crystallinity and Ferroelectricity of MOD-derived Pb_(o.985)La_(o.o1)(Zr_(o.4)Ti_(0.6))O_3 Thin Films

Pb0.985La0.01(Zr,Ti)O3(PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380癈 displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.