Hysteresis Loops Characteristics of Bi_4Ti_3O_(12) Ferroelectric Thin Films with Different Configuration on Si Substrates
Source abstract
Abstract
In order to fabricate high quality ferroelectric thin films qualified for ferroelectric memories, different ferroelectric thin film systems, with the structures of MFM and MFS, were deposited by using the sol-gel technique. The ferroelectric properties and the P-V hysteresis loops characteristics of these different ferroelectric thin film systems were analyzed with comparison. Based on the test results, a new practicable configuration of Ag/Pb(Zr0.52Ti0.48)O3/ Bi4Ti3O12/p-Si was fabricated, which can improve the ferroelectric properties and hysteresis loops characteristics of the ferroelectric thin films.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Industrial Technology and Control Systems
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