Growth of Large 6H-SiC Single Crystals

The growth process of large SiC single crystals by PVT method was reported. The influences of growth temperature, temperature gradient, the pressure in the growth chamber and impurity on the crystal growth and its quality were investigated. The large 6H-SiC single crystal with diameter of 45mm was successfully grown under optimum process conditions. The densities of micropipe and dislocation were ca. 103cm-2 and 104 - 105cm-2 respectively observed through chemical etching technique. The crystal was n-type semiconductor, the carrier concentration and electron mobility were 1014cm-3 and 90cm2V-1S-1 respectively.