Structure and Light Absorption Ability of NiO-V_2O_5/SiO_2

The supported coupled-semiconductor of NiO-V2O5/SiO2 was prepared by a chemical modification method. BET, TPR, XRD, Raman, TEM, IR and UV-vis DRS techniques were used to characterize the structure and light adsorption ability of NiO-V2O5/SiO2. The results show that, V2O5 exists on the surface of silica as crystallite with the partical size about 10nm, Ni2+-O-V5+ bond forms on the surface of NiO-V2O5/SiO2, and NiO and V2O5 on the surface of support can act on each other. On the one hand, NiO can promote the dispersion of V2O5 on the surface of silica, which effectively prevents V2O5 from aggregation, diminishes the size of crystallite, moreover, NiO can expand the light absorption ability of solid material, advances its utilization to light energy.