IrO_2 Thin Films Deposited by DC Magnetron Sputtering Method

Iridium oxide (IrO_2) thin films were successfully grown on SiO2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity). PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O_2) and growth temperature and annealing conditions on the crystalline nature and morphology of IrO_2 thin films was discussed.