Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing

Lead zirconate titanate (Pb(Zr0.53Ti0.47)O3, PZT) ferroelectric thin films were deposited onto platinum coated silicon substrates with and without lead titanate(PbTiO3,PT) seeding layers by a modified sol-gel processing using zirconium nitrate as the zirconium source. The precursor solution for spin coating was prepared from lead acetate, tetrabutyl titanate, and zirconium nitrate. The effect of the prepared PZT thin films with PT seedings on the microstructure and electrical properties were investigated. The results show that the PZT thin films are of uniformity, density, and crack-free. The corresponding remanent polarization(Pr) and coercive field(Ec) are 20μC/cm2 and 59kV/cm respectively. Dielectric constant and loss tangent of PZT thin films with PT seedings are 385 and 0.03, respectively.