c-axis Oriented Growth and Electrical Properties of Bi_4Ti_3O_(12) Thin Films Deposited on p-Si

Polycrystalline Bi4Ti3O12 thin films were successfully produced on p-Si substrates by sol-gel technique. Effects of annealing temperature, annealing time, film thickness on the c-axis-oriented growth behavior, ferroelectric properties and leakage current were studied. The results indicate that annealing temperatures have remarkable influence on c-axis-oriented growth behavior with an orientation factor of (00l) (F = (P- P0)/(1- P0)) from 0.081 at 550℃ to 0.827 at 850℃, and the annealing time has also influence on it. Bi4Ti3O12 thin films are highly c-axis-oriented over 750℃ of annealing temperature and the remanent polarization decreases with the increase of the orientation factor of (00l). The leakage current densities of Bi4Ti3O12 films increase with the ascending annealing temperature, but the c-axise-oriented behavior helps to slow down the increase of the leakage current densities of Bi4Ti3O12 films.