Optoelectrical Properties and Back Contact Characteristic of VSe2 Thin Films
Source abstract
Abstract
采用电子束蒸发法制备VSe 2 薄膜并进行退火处理, 通过XRD、SEM、透过谱、Hall效应、电导率–温度关系等表征了薄膜的结构、形貌、光学和电学性质, 用半导体特性测试仪研究了VSe 2 薄膜的背接触特性。结果表明: VSe 2 薄膜在一定的退火温度下结晶并呈稳定的六方相, VSe 2 薄膜为p型直接禁带跃迁材料, 光能隙约2.35 eV。将VSe 2 作为背接触层应用于CdTe多晶薄膜太阳电池, 消除了roll-over现象, 有效提高了器件性能。
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
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