Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics
Source abstract
Abstract
基于 Al 2 O 3 /Chitosan 叠层栅介质的 双栅 IGZO 神经形态晶体管 王靖瑜 1 , 万昌锦 1 , 万 青 1,2 (1.南京大学 电子科学与工程学院, 南京 210093; 2. 浙江大学 微纳电子学院, 杭州 310027) 摘 要: 基于铟镓锌氧(IGZO)的双电层(EDL)晶体管以低加工温度、 良好的一致性以及丰富的离子动力学等优势, 在 神经形态感知和计算系统中具有极大的潜在应用前景。然而, 双电层 IGZO 晶体管的高漏电(>10 nA)导致的高能耗 以及异常电流尖峰/毛刺一直是相关神经形态计算发展的主要障碍之一。本研究提出了一种具有 Al 2 O 3 /壳聚糖 (Chitosan)叠层栅介质的新型 IGZO 神经形态晶体管。 与单层壳聚糖栅介质晶体管相比, 引入 Al 2 O 3 叠层的器件具有 78.3 mV/decade 的低亚阈值摆幅, 在 1.8 V 电压下 1.3 nA 的低漏电流(降低约 98%), 3.73 V 的大滞回窗口(提升 3.4 倍) 以及 0.86 nA 的低兴奋性突触后电流(降低约 97%), 单脉冲(0.5 V, 20 ms)功耗仅为 1.7 pJ(降低约 96%)。此外, 研究 还基于双栅 EDL 协同调控实现了尖峰突触功能的模拟和沟道电流的有效调制, 并有效规避突触塑性模拟中高漏电 导致的非正常电流尖峰/毛刺。上述结果表明, 堆叠高 k 栅介质可以有效改善神经形态器件的漏电、功耗和性能, 为 进一步开发超低功耗神经形态感知和计算系统提供了新的思路。
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (40)
Show source-provided references
1. ROY K, JAISWAL A, PANDA P. Towards spike-based machine intelligence with neuromorphic computing. Nature, 2019, 575(7784):607.10.1038/s41586-019-1677-2 ↗
2. YU S. Neuro-inspired computing with emerging nonvolatile memorys. Proceedings of the IEEE, 2018, 106(2):260.10.1109/JPROC.2018.2790840 ↗
3. PREZIOSO M, MERRIKH-BAYAT F, HOSKINS B D, et al. Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Nature, 2015, 521(7550):61.10.1038/nature14441 ↗
4. ZHU Y, ZHU Y, MAO H, et al. Recent advances in emerging neuromorphic computing and perception devices. Journal of Physics D: Applied Physics, 2021, 55(5):053002.10.1088/1361-6463/ac2868 ↗
5. YOU Z, RAMANATHAN S. Mott memory and neuromorphic devices. Proceedings of the IEEE, 2015, 103(8):1289.10.1109/JPROC.2015.2431914 ↗
6. WANG J, LI Y, YIN C, et al. Long-term depression mimicked in an IGZO-based synaptic transistor. IEEE Electron Device Letters, 2017, 38(2):191.10.1109/LED.2016.2639539 ↗
7. PARK Y J, KWON H T, KIM B, et al. 3-D stacked synapse array based on charge-trap flash memory for implementation of deep neural networks. IEEE Transactions on Electron Devices, 2019, 66(1): 420.10.1109/TED.2018.2881972 ↗
8. YAN W, PAGE A, NGUYEN-DANG T, et al. Advanced multimaterial electronic and optoelectronic fibers and textiles. Advanced Materials, 2019, 31(1):e1802348.10.1002/adma.201802348 ↗
9. YAN W, QU Y, GUPTA T D, et al. Semiconducting nanowire-based optoelectronic fibers. Advanced Materials, 2017, 29(27):1700681.10.1002/adma.201700681 ↗
10. GKOUPIDENIS P, KOUTSOURAS D A, LONJARET T, et al. Orientation selectivity in a multi-gated organic electrochemical transistor. Scientific Reports, 2016, 6: 27007.10.1038/srep27007 ↗
11. KIM M K, LEE J S. Ferroelectric analog synaptic transistors. Nano Letters, 2019, 19(3): 2044.10.1021/acs.nanolett.9b00180 ↗
12. ZHU Y, MAO H, ZHU Y, et al. Photoelectric synapse based on InGaZnO nanofibers for high precision neuromorphic computing. IEEE Electron Device Letters, 2022, 43(4): 651.10.1109/LED.2022.3149900 ↗
13. MAO H, HE Y, CHEN C, et al. A spiking stochastic neuron based on stacked InGaZnO memristors. Advanced Electronic Materials, 2021, 8(2):2100918.10.1002/aelm.202100918 ↗
14. JIANG J, WAN Q, SUN J, et al. Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature. Applied Physics Letters, 2009, 95 (15): 152114.10.1063/1.3251782 ↗
15. VAN DE BURGT Y, MELIANAS A, KEENE S T, et al. Organic electronics for neuromorphic computing. Nature Electronics, 2018, 1(7):386.10.1038/s41928-018-0103-3 ↗
16. HE Y, YANG Y, NIE S, et al. Electric-double-layer transistors for synaptic devices and neuromorphic systems. Journal of Materials Chemistry C, 2018, 6(20):5336.10.1039/C8TC00530C ↗
17. HE Y, NIE S, LIU R, et al. Dual-functional long-term plasticity emulated in IGZO-based photoelectric neuromorphic transistors. IEEE Electron Device Letters, 2019, 40(5):818.10.1109/LED.2019.2908727 ↗
18. KIM J, KIM Y, KWON O, et al. Modulation of synaptic plasticity mimicked in Al nanoparticle-embedded IGZO synaptic transistor. Advanced Electronic Materials, 2020, 6(4):1901072.10.1002/aelm.201901072 ↗
19. ZHU Y, HE Y, JIANG S, et al. Indium-gallium-zinc-oxide thin-film transistors: materials, devices, and applications. Journal of Semiconductors, 2021, 42(3):031101.10.1088/1674-4926/42/3/031101 ↗
20. JANG Y, PARK J, KANG J, et al. Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing. ACS Applied Electronic Materials, 2022, 4(4):1427.10.1021/acsaelm.1c01088 ↗
21. VAN DE BURGT Y, LUBBERMAN E, FULLER E J, et al. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing. Nature Materials, 2017, 16(4):414.10.1038/nmat4856 ↗
22. KUZUM D, JEYASINGH R G, LEE B, et al. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Letters, 2012, 12(5): 2179.10.1021/nl201040y ↗
23. KIM C, FACCHETTI A, MARKS T J. Gate dielectric microstructural control of pentacene film growth mode and field-effect transistor performance. Advanced Materials, 2007, 19(18):2561.10.1002/adma.200700101 ↗
24. WANG B, HUANG W, CHI L, et al. High-k gate dielectrics for emerging flexible and stretchable electronics. Chemical Reviews, 2018, 118(11):5690.10.1021/acs.chemrev.8b00045 ↗
25. ZHOU J, LIU Y, SHI Y, et al. Solution-processed chitosan-gated IZO-based transistors for mimicking synaptic plasticity. IEEE Electron Device Letters, 2014, 35(2):280.10.1109/LED.2013.2295815 ↗
26. GAO S, ZHOU Q, LIU X, et al. Breakdown enhancement and current collapse suppression in AlGaN/GaN HEMT by NiOX/ SiNX and Al2O3/SiNX as gate dielectric layer and passivation layer. IEEE Electron Device Letters, 2019, 40(12): 1921.10.1109/LED.2019.2945175 ↗
27. WEI W, ZENG Z, LIAO W, et al. Extended gate ion-sensitive field-effect transistors using Al2O3/hexagonal boron nitride nanolayers for ph sensing. ACS Applied Nano Materials, 2019, 3(1):403.10.1021/acsanm.9b02037 ↗
28. PALASANTZAS G, HOSSON J D, and BARNAS J. Surface/ interface roughness effects on magneto-electrical properties of thin films. Surface Science, 2002, 507-510: 541.10.1016/S0039-6028(02)01306-7 ↗
29. LI J, WU J, LIU J, et al. Effect of composition, interface, and deposition sequence on electrical properties of nanolayered Ta2O5-Al2O3 films grown on silicon by atomic layer deposition. Nanoscale Research Letters, 2019, 14(1):75.10.1186/s11671-019-2907-0 ↗
30. CHOE M, JO G, MAENG J, et al. Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness. Journal of Applied Physics, 2010, 107(3):034504.10.1063/1.3298910 ↗
31. FORTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: a review of recent advances. Advanced Materials, 2012, 24(22): 2945.10.1002/adma.201103228 ↗
32. ZHU L Q, CHAO J Y, XIAO H, et al. Chitosan-based electrolyte gated low voltage oxide transistor with a coplanar modulatory terminal. IEEE Electron Device Letters, 2017, 38(3):322.10.1109/LED.2017.2655107 ↗
33. WAN X, HE Y, NIE S, et al. Biological band-pass filtering emulated by oxide-based neuromorphic transistors. IEEE Electron Device Letters, 2018, 39(11):1764.10.1109/LED.2018.2869095 ↗
34. NIE S, HE Y, LIU R, et al. Low-voltage oxide-based synaptic transistors for spiking humidity detection. IEEE Electron Device Letters, 2019, 40(3):459.10.1109/LED.2019.2897228 ↗
35. KIM K, CHEN C L, TRUONG Q, et al. A carbon nanotube synapse with dynamic logic and learning. Advanced Materials, 2013, 25(12): 1693.10.1002/adma.201203116 ↗
36. JIANG S, HE Y, LIU R, et al. Synaptic metaplasticity emulation in a freestanding oxide-based neuromorphic transistor with dual in-plane gates. Journal of Physics D: Applied Physics, 2021, 54(18):185106.10.1088/1361-6463/abdc92 ↗
37. LIU R, HE Y, JIANG S, et al. Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor. Chinese Physics B, 2021, 30(5):058102.10.1088/1674-1056/abc163 ↗
38. ZHANG C, LI S, HE Y, et al. Oxide synaptic transistors coupled with triboelectric nanogenerators for bio-inspired tactile sensing application. IEEE Electron Device Letters, 2020, 41(4):617.10.1109/LED.2020.2972038 ↗
39. YANG J T, GE C, DU J Y, et al. Artificial synapses emulated by an electrolyte-gated tungsten-oxide transistor. Advanced Materials, 2018, 30(34):e1801548.10.1002/adma.201801548 ↗
40. ZIEGLER M, KOHLSTEDT H. Mimic synaptic behavior with a single floating gate transistor: a memflash synapse. Journal of Applied Physics, 2013, 114(19):194506.10.1063/1.4832334 ↗