An a-IGZO TFT-based AMOLED pixel circuit for highly stable driving current under pico-ampere-range current region
Source abstract
Abstract
We propose an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based active-matrix organic light-emitting diode (AMOLED) pixel circuit that provides highly stable driving current even in the pico-ampere-range current region. The proposed circuit minimizes the stored threshold voltage ( $$\mathrm {VTH}$$ ) loss caused by parasitic capacitors through the indirect connection of switching TFTs (SWTs) at the beginning of the emission stage, demonstrating high compensation accuracy for OLED current below 1nA. The measured results confirmed that the relative current error rate, calculated from the average current of five measured circuits, remained within a maximum of 14.99%. Therefore, the proposed circuit can generate a stable driving current in the pico-ampere-range current region, even under $$\mathrm {VTH}$$ variations in the driving TFT (DRT).
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
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