Reducing the poly‐Si TFT Non‐uniformity by transistor slicing
Source abstract
Abstract
Abstract Transistor slicing refers to the use of multiple smaller transistors in implementing a large MOS transistor. What is special about transistor slicing is that it can reduce the effects of device non‐uniformity introduced during the fabrication process. The paper presents the idea of transistor slicing and analyzes the benefits of using transistor slicing in the context of Poly‐Si TFT‐LCD driving.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Advanced Surface Polishing Techniques · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
a LG electronics
b Department of Electrical Engineering , Han yang University , 17 Hang dang‐Dong, Sung dong‐Gu, Seoul , Korea Phone: Fax: E-mail:
References (6)
Show source-provided references
1. 10.1889/1.183398710.1889/1.1833987 ↗
2. 10.1889/1.183390410.1889/1.1833904 ↗
3. 10.1149/1.183784310.1149/1.1837843 ↗
4. Yoneda K. · IDW'97 · 1997 · 231
5. Jeon J. · Asia Display'98 · 1998 · 425
6. Hogg R. V. · 1978