Indium oxide nanomesh-based electrolyte-gated synaptic transistors
Source abstract
Abstract
Based on the movement and accumulation of ions in the 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, the electrical double layer (EDL) was formed between a nanomesh channel and the [EMIM]DCA electrolyte to contribute to the increase in the conductance of the channel. The basic functions of artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP), are realized successfully. Besides, the high-pass filter function was implemented, which shows the application potential of the device in signal processing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Neural dynamics and brain function
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
Funding
Nano-Material Technology Development · National Research Foundation of Korea · Ministry of Science and ICT
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