Electrical characteristics of organic thin‐film transistors with polyvinylpyrrolidone as a gate insulator

Abstract This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin‐film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with 15.3A interplanar spacing. OTFT with PVPy exhibited a field‐effect mobility of 0.23 cm2/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high‐performance OTFTs.