Light effects of the amorphous indium gallium zinc oxide thin‐film transistor
Source abstract
Abstract
Abstract The optical and electrical properties of the amorphous indium gallium zinc oxide thin‐film transistor (a‐IGZO TFT) were studied. When the a‐IGZO TFT was illuminated at a wavelength of 660 nm, the off‐state drain current slightly increased, while below 550 nm it increased significantly. The a‐IGZO TFT was found to be extremely sensitive, with deep‐level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the a‐IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo‐induced behaviors in the a‐IGZO films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
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