A Review of Interface Engineering in Antimony Chalcogenide Thin Film Solar Cells
Source abstract
Abstract
Antimony chalcogenides (Sb 2 X 3 , where X = S, Se, or S x Se 1−x ) are promising materials for thin‐film solar cells due to their tunable bandgaps (1.1–1.8 eV), high absorption coefficients (>10 5 cm −1 ), nontoxicity, and earth‐abundant composition. Recent advancements have achieved power conversion efficiencies (PCEs) exceeding 10%, with a record of 10.81% for Sb 2 (S, Se) 3 cells. However, interface‐related issues, such as recombination losses and open‐circuit voltage ( V OC ) deficits, limit performance. Interface engineering strategies have significantly improved device efficiency and stability, including buffer layer optimization, defect passivation, surface treatments, post‐processing, and doping. This review summarizes the latest developments in these areas, discusses ongoing challenges, and proposes future research directions to enhance the performance of antimony chalcogenide solar cells.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Science and Engineering Program School for Engineering of Matter Transport, and Energy Arizona State University Tempe Arizona USA
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