Preparation of single phase semiconducting Mg_2Si film on Si substrate by low vacuum heat treatment

Semiconducting Mg2Si films were prepared by magnetron sputtering,Mg film was deposited onto Si substrate and subsequent low vacuum heat treatment was carried out.X-ray diffraction,scanning electron microscopy and Raman spectra were performed to characterize and analyze the structure of films.Effects of heat treatment temperatures(350-550℃) and heat treatment time(3-7 h) on the formation of Mg2Si films were investigated under low vacuum(10-1-10-2Pa).The results show that the optimal heat treatment conditions for preparing single phase Mg2Si film are 400-550℃ and 4-5h in low vacuum.Two distinguished peaks at 256 and 690cm-1 are observed in Raman scattering spectra,which are characteristic peak position of Mg2Si.