The Preparation of Al~(3+)-Doped ZnO Thin Film and Its Investigation

The Al 3+ -doped and un-doped ZnO thin films were prepared on Na-Ca-Si glass substrats (microscope slides) by sol-gel process from Zn(OAc) 2·2H 2O-2-methoxyethanol solutions containing monoethanolamine;This thin films have potential value in solar cell application with strongly preferred orientation of C-axis perpendicular to the substrate surface,high visible transmittance from 400～800nm and high thin film conductivity.By the measurements of SEM,XRD and UVS,the thin films prepared at different conditions were analysed.The results proved that the thin films were homogenous,dense and crackfree with the crystalline phase of hexagonal wurtzite,the best transmittance of 99.6% in 400～800nm visible region and the crystal dimension of 50～200nm;The results of measurements else also proved that the thickness of single dip-coating was 30～50nm,Al 3+ -doped ZnO thin films have potential value in solar cell application and this films resistivity,Hall coefficient,electron concentration,mobility were found to be 2.52×10 -3 ～2.94×10 -3 Ω·cm,6.25×10 -7 ～2.36×10 -7 cm 3/C,1×10 25 cm -3 ～2.64×10 25 cm -3 and 2.48×10 -4 ～8.03×10 -5 cm 2/V·s, respectively.