GaSb films grown by MBE on GaAs(001) substrates

GaSb thin films were grown on GaAs(001) substrates by molecular beam epitaxy (MBE).The crystalline quality,electrical properties and optical properties were studied by high resolution transition electron microscopy (HRTEM),atomic force microscopy (AFM),Hall measurement and low temperature photoluminescence spectra (LTPL),respectively.It was found that the GaSb films directly grown on GaAs substrates have smooth surface and high hole mobility.It was also found that the AlSb/GaSb superlattices (SLs) can restrict the dislocations into GaSb layers.The intensity of PL spectra of GaSb layer became bigger homologous,which indicated that the optical qualities of GaSb films was improved.