Study of fast growth of polycrystalline silicon film from SiCl_4/H_2 by PCVD at low-temperature

Polycrystalline silicon films were directly fabricated at high deposition rate with high crystalline fraction under low-temperature of 200～350℃ from SiCl_4+H_2 mixture gases by plasma chemical vapor deposition technique. The deposition rate is strongly affected not only by the RF power and the flow ratio of H_2/SiCl_4 but also by the substrate temperature, while the crystalline fraction mainly depend on the RF power and the flow ratio of H_2/SiCl_4, By combining deposition conditions of the flow ratio of H_2/SiCl_4, RF power and the substrate temperature, poly-Si films were obtained at high deposition rate of 0.35nm/s with the crystalline fraction of 75% under low temperature of 300℃. Dark-conductivity and photo-conductivity achieved for the poly-Si films were ～10~(-4)S·cm~(-1) and ～10~(-3)S·cm~(-1), respectively.