Dielectric properties of fluorinated amorphous carbon thin films

The dielectric properties of amorphous fluorinated carbon (a-C∶F) films in the frequency range of 10~2～10~6Hz, which were prepared by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) using trifluromethane (CHF_3) and benzene (C_6H_6) as the source gases, were investigated. The dispersion at low frequency was found to be relevant to the relative content of CC. The strong dispersion can be observed at high relative content of CC due to the decrease in C—F content with weak polarization.