article·2011-01-01Open access

Structural characteristics of aluminium nitride nanowires synthesized by direct nitridization method

Liu Fei-fei

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Abstract

Aluminum nitride(AlN) nanowires were successfully synthesized by direct nitridization method.At 800℃,the reaction of nitrogen and aluminium lump occurred in ordinary equipments with magnesium powder as catalyst.The characterization of samples was done using XRD,SEM and Raman spectrograph.The results reveal the samples were pure hexagonal phase AlN of nanowires heaped structure with diameter about 60nm.The peaks of the Raman spectrum move towards low wavenumbers compared with monocrystal AlN,which demonstrates there is tensile stress in the materials.
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OpenAlex topics: GaN-based semiconductor devices and materials · Advanced ceramic materials synthesis · Acoustic Wave Resonator Technologies

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