Formation of photosensitive ZrO_2-SiO_2 gel films by chemical modification method

The photosensitive of x ZrO 2(100- x )SiO 2 gel films, which were obtained from zirconium tetra butoxide chemically modified with benzoylacetone and partly hydrolyzed silicon ethoxide have been studied. These gel films showed an optical absorption band at around 335nm characteristic of the π π* transition in chelate rings of β diketonate ligands. The irradiation of the gel films with UV light dissociated the chelate ring and simultaneously decreased the solubility of the gel films in ethanol. This finding was successfully applied to the fine patterning of x ZrO 2(100- x )SiO 2 gel films with x =30 or above. The gel films were leached in ethanol, after UV irradiation through a mask and heat treated and 400℃ for 20min to give patterned amorphous ZrO 2 SiO 2 films.