Growth control on the conduction type of SiC:Al films with MOCVD method

Al-doped SiC films are deposied on silicon substrates by metal-organic chemical vapor deposition (MOCVD).The flow rate ratio between SiH4 and TMA,which determines the aluminium content in the SiC films,plays an important role in determining the conduction type of SiC films.XPS spectrum shows that aluminium atoms are institials in major and the SiC films are n-type when the aluminium content is less than 1.5% and that aluminium atoms substitute silicon atoms in major and the films are p-type when the aluminium content is between 1.5% and 3.0%,and the SiC films becomes high resistivity and the crystall quality becomes worse as the aluminum content exceeds 3%.